Hynix 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin SODIMM RAM Module Configuration_x4 2xM393A2G40EB1-CRC Capacity 32GB (2x 16GB)

2xM393A2G40EB1-CRC Capacity 32GB (2x 16GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

HMT351U7BFR8C-H9T0 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

Connect this powerful drive to your wireless router for shared storage on your home network that you can access within and outside the home

Samsung Electronics overtook Intel as the largest semiconductor chip maker in the world

MT9KSF25672PZ-1G4M1 Capacity 2GB (1x 2GB) Brand Micron Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

Hynix 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin SODIMM RAM Module Configuration_x4 2xM393A2G40EB1-CRC Capacity 32GB (2x 16GB)Product Overview This 4GB (1x 4GB) DDR3 1333 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.